الفهرس | Only 14 pages are availabe for public view |
Abstract In this thesis, a new class of nanometer scale transistors was investigated. In these transistors, the field generated by an applied gate bias modulates the transmission probability through a tunnel barrier between the drain and the source. We treated two types of transistors; namely single- and dual-gate transistors. The characteristics of such transistors were studied using a computer simulation. A 2-D Poisson’s equation solver was implemented to calculate the potential distribution. Then, the current was calculated using the transmission coefficient based on either WKB or TMM methods. It was found that a moderate gate bias change results in an appreciable change in the drain current. The various key parameters were studied and it was found that they influence satisfactorily the /- V characteristics, the transconductance and the output impedance. Detailed DC and AC analysis were carried out to support the design of the structures under consideration. |