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العنوان
A study on the characters of photosensitive nano layers of semiconducting material and its application /
المؤلف
Okasha, Asmaa Mohamed Okasha Mohamed.
هيئة الاعداد
باحث / Asmaa Mohamed Okasha Mohamed Okasha
مشرف / Mohamed Mohamed El-Zaidia
مشرف / Lobna Mohamed Sharaf El-Deen
مشرف / Mohamed Maamoun El -Hawary
الموضوع
Physics. Semiconductor. Materialsw. Semiconductors. Compound semiconductors. Physics.
تاريخ النشر
2013.
عدد الصفحات
208 p. :
اللغة
الإنجليزية
الدرجة
ماجستير
التخصص
الفيزياء وعلم الفلك
تاريخ الإجازة
1/7/2013
مكان الإجازة
جامعة المنوفية - كلية العلوم - Physics Department.
الفهرس
Only 14 pages are availabe for public view

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from 208

Abstract

The samples of the system Se80Ge20-xInx were prepared by using melt quenching technique where x = 0, 5, 10, 15and 20 atomic %. The x-ray diffraction ensures the amorphous nature of the obtained samples as powder and as thin films of different thickness for all values of x.
The structure of the obtained sample was also, examined by SEM and TEM and all proved that, the samples are amorphous and lie in the nanoscale where the grain size were in the range from 6 up to 96 nm.
The optical transmission (T) and reflection (R) were nonlinear function with the wavelength in the wavelength range 200-2500 nm.
The same behavior was revealed for the refractive index, extinction coefficient and absorption coefficient. The optical band gap was calculated and found to be Indium content dependent and decreases as Indium increases from 2.41 to 1.65eV as Indium content increases from 0 to 20 at %.
The optical properties and optical parameters illustrate that, this system is photosensitive and all the samples can be used as human eye protection against ultraviolet radiation.
Also, all samples can be used as transparent window during the visible region of light spectra.
Finally, all the samples of this system can be used as