الفهرس 
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Abstract
n recent years a g:rowiJ:J6 interest has been expressed in non¬vola.t.i.la ~r . This interest stems froo the need for high density, low cost semiconductor memory chips as well as an attempt to provide a substitute for the nonvolatile storage capability of magnetic memories. Initial research efforts in this direction
have been centered in the area of semiconductor Read-0nly MemoJ1,es
(roMs). Proposed nonvolatile semiconductor storage devices rely 011 charge :rtorage in a dielectric which foms part of the gate of an in.fJ\1+8 •. ~ed gate field effect transistor. Charge is stored either in inte:faoe traps between the dielectric layers, or in a buried electricaJJ.y¬floating gate. The floating’-gate avalanche-injection MNOS meI!lO:t:’Y device is one of the structures proposed to perfoIn nonvolati+~ storage beside being electrically written and erased.
In Chapter 1, a general account on the Metal-oxide-SemiconductCl’ (K:>S) field-effect transistor is presented. This is the essential structure of I!lOst of the proposed memory structures. The history of the field-effect transistor (m) is first reviewed, followed by a discussion of the characteristics of IDSFETs. This includes the